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 Preliminary Datasheet 3A DDR TERMINATION REGULATOR General Description
The AP2302 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 3A current continuously, offers enough current for most DDR applications. Output voltage is designed to track the reference voltage within a 2% (DDR I) and 3% (DDR II) tolerance for load regulation while preventing shooting through on the output stage. On-chip thermal limiting provides protection against a combination of high current and ambient temperature which would create an excessive junction temperature. The AP2302, used in conjunction with series termination resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs. The AP2302 is available in SOIC-8, TO-252-5L and TO-263-5L packages.
AP2302 Features
* * * * * Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 3A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors Shutdown for Standby or Suspend Operation with High-impedance Output Mode
Applications
* * * DDR-SDRAM Termination DDR-II Termination SSTL-2 Termination
SOIC-8
TO-252-5L
TO-263-5L
Figure 1. Package Types of AP2302
Jul. 2006 Rev. 1. 2 1
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Pin Configuration
M Package (SOIC-8)
VIN GND REFEN VOUT 1 2 3 4 8 7 6 5 VCNTL VCNTL VCNTL VCNTL
AP2302
D Package (TO-252-5L)
5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN
S5 Package (TO-263-5L)
5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN
Figure 2. Pin Configuration of AP2302 (Top View)
Pin Description
Pin Number SOIC-8 1 2 3 4 5, 6, 7, 8 TO-252-5L 1 2 4 5 3 TO-263-5L 1 2 4 5 3 Pin Name VIN GND REFEN VOUT VCNTL Power Input Ground Reference Voltage Input and Chip Enable Output Voltage Supply Voltage for Internal Circuit (Internally Connected for SOIC8), (TAB for TO-252-5L and TO-263-5L) Function
Jul. 2006 Rev. 1. 2 2
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Functional Block Diagram
VCNTL
3 (5, 6, 7, 8)
AP2302
VIN
1
CURRENT LIMIT BANDGAP
A(B) A for 5-pin B for 8-pin
OUTPUT CONTROL
REFEN
4 (3)
5 (4)
VOUT
START UP THERMAL PROTECT
2
GND
Figure 3. Functional Block Diagram of AP2302
Ordering Information
AP2302 Circuit Type Package M: SOIC-8 D: TO-252-5L S5: TO-263-5L
Temperature Range Part Number Tin Lead AP2302M SOIC-8 0 to 125oC AP2302MTR TO-2525L TO-2635L AP2302D 0 to 125oC AP2302DTR AP2302S5 0 to 125oC AP2302S5TR AP2302S5TR-E1 AP2302S5 AP2302S5-E1 Tape Reel AP2302DTR-E1 AP2302S5-E1 AP2302D AP2302S5 AP2302D-E1 AP2302S5-E1 Tape Reel Tube AP2302MTR-E1 AP2302D-E1 2302M AP2302D 2302M-E1 AP2302D-E1 Tape Reel Tube Lead Free AP2302M-E1
E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube
Marking ID Packing Type Tin Lead 2302M Lead Free 2302M-E1 Tube
Package
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 2 3
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Absolute Maximum Ratings (Note 1)
Parameter Supply Voltage for Internal Circuit Power Dissipation ESD (Human Body Model) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Symbol VCNTL PD ESD TJ TSTG TLEAD SOIC-8 Package Thermal Resistance (Free Air) JA TO-252-5L TO-263-5L Value 7 Internally Limited 2 150 -65 to 150 260 160 130 90
oC/W
AP2302
Unit V W KV
oC oC oC
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Supply Voltage for Internal Circuit DDR I Power Input DDR II Junction Temperature Note 2: Keep VCNTL TJ VIN in power on and power off sequences. 0 VIN 1.6 1.8 125
oC
Symbol VCNTL (Note 2, 3)
Min
Typ 3.3 2.5
Max 6 VCNTL
Unit V V
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
Jul. 2006 Rev. 1. 2 4
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10F (Ceramic), unless otherwise specified.) Parameter Output Offset Voltage DDR I Load Regulation DDR II Quiescent Current of VCNTL Leakage Current in Shutdown Mode Protection Current Limit Thermal Shutdown Temperature Thermal Shutdown Hysteresis Shutdown Function Shutdown Threshold Trigger Output=High Output=Low Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. 0.8 0.2 V ILIMIT TSHDN 3.3VVCNTL5V 3 150 50 A
oC oC
AP2302
Symbol VOS
Conditions IL=0A (Note 4) IL=0 to 1.5A IL=0 to -1.5A IL=0 to 1.5A IL=0 to -1.5A No Load VREFEN<0.2V, RL=180
Min -20
Typ 0 0.8 0.8 1.2 1.2 3 3
Max 20 2 2 3 3 5 6
Unit mV
VOUT/ VOUT IQ ISHDN
%
mA
A
Jul. 2006 Rev. 1. 2 5
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Performance Characteristics AP2302
6
6
Sourcing Current (A)
Sinking Current (A)
4
4
VCNTL=3.3V VIN=2.5V VOUT=1.25V
2 -40
VCNTL=3.3V VIN=2.5V VOUT=1.25V
2 -40
-20
0
20
40
60
o
80
100
120
-20
0
20
40
60
o
80
100
120
Junction Temperature ( C)
Junction Temperature ( C)
Figure 4. Sourcing Current vs. Junction Temperature
Figure 5. Sinking Current vs. Junction Temperature
650
650
Threshold Voltage (mV)
600
Threshold Voltage (mV)
600
550
550
VCNTL=3.3V
500
VCNTL=5.0V
500
VIN=2.5V
VIN=2.5V
-40
-20
0
20
40
60
o
80
100
120
-40
-20
0
20
40
60
o
80
100
120
Junction Temperature ( C)
Junction Temperature ( C)
Figure 6. Threshold Voltage vs. Junction Temperature
Figure 7. Threshold Voltage vs. Junction Temperature
Jul. 2006 Rev. 1. 2 6
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2302
40 Output Transient Voltage (mV) Output Transient Voltage (mV) Output Current (A) 20 0 -20 3 Output Current (A) 1 -1 -3 -5
Time (s)
40 20 0 -20 3 1 -1 -3 -5
Time (s)
Figure 8. 0.9VTT at 3A Transient Response (Conditions: VIN=2.5V, VCNTL=3.3V, COUT=10F)
Figure 9. 1.25VTT at 3A Transient Response (Conditions: VIN=2.5V, VCNTL=3.3V, COUT=10F)
0.30 0.28 0.26
VIN=0.9V VIN=0.85V VIN=0.8V
RDS(ON) ()
0.30 0.28 0.26 0.24 0.22 0.20
VIN=0.9V VIN=0.85V VIN=0.8V
RDS(ON)()
0.24 0.22 0.20 0.18 0.16 25 50 75
o
VCNTL=3.3V VREFEN=1.0V
100 125
0.18 0.16 25 50 75
o
VCNTL=5.0V VREFEN=1.0V
100 125
Junction Temperature ( C)
Junction Temperature ( C)
Figure 10. RDS(on) vs. Junction Temperature
Figure 11. RDS(on) vs. Junction Temperature
Jul. 2006 Rev. 1. 2 7
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2302
350
350
Package: SOIC-8 No Heatsink
300
Package: TO-252-5L No Heatsink
300
Copper Area (mm )
Copper Area (mm )
2
250
250
TC=25 C TC=50 C TC=65 C
o o
2
o
200
200
TC=25 C
150
o o o
TC=50 C TC=65 C
150
100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
100 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
Power Dissipation (W)
Power Dissipation (W)
Figure 12. Copper Area vs. Power Dissipation
Figure 13. Copper Area vs. Power Dissipation
350
Package: TO-263-5L No Heatsink
300
Copper Area (mm )
2
250
TC=25 C TC=50 C TC=65 C
o o
o
200
150
100 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0
Power Dissipation (W)
Figure 14. Copper Area vs. Power Dissipation
Jul. 2006 Rev. 1. 2 8
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Typical Application
VCNTL = 3.3V
AP2302
VIN = 2.5V
CCNTL R1 VIN REFEN AP2302 GND R2 CSS COUT RDUMMY VCNTL VOUT CIN
RTT
EN
Figure 15. Typical Application of AP2302
R1=R2=100K, RTT=50 / 33 / 25 RDUMMY=1K, as for VOUT discharge when VIN is not present but VCNTL is present CSS=1F, CIN=470F, CCNTL=47F, COUT=470F
Jul. 2006 Rev. 1. 2 9
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Mechanical Dimensions SOIC-8 Unit: mm(inch) AP2302
4.800(0.189) 5.000(0.197)
7
1.350(0.053) 1.750(0.069)
0.320(0.013)
8
7
8
0.675(0.027) 0.725(0.029)
D
5.800(0.228) 6.200(0.244)
D 20:1
1.270(0.050) TYP
0.100(0.004) 0.300(0.012) R0.150(0.006)
0.800(0.031) 0.200(0.008)
1.000(0.039) 3.800(0.150) 4.000(0.157)
0 8
0.330(0.013) 0.510(0.020) 0.900(0.035)
1 5
R0.150(0.006)
0.190(0.007) 0.250(0.010)
Jul. 2006 Rev. 1. 2 10
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Mechanical Dimensions (Continued) TO-252-5L Unit: mm(inch) AP2302
0.900(0.035) 1.250(0.049)
6.350(0.250) 6.700(0.264) 4.300(0.169) 5.500(0.217)
2.180(0.086) 2.400(0.094) 0.430(0.017) 0.600(0.023)
4.800(0.189) MIN
9.500(0.374) 10.400(0.410) 0.000(0.000) 0.250(0.010)
5.970(0.235) 6.220(0.245)
4.300(0.169) 5.400(0.213)
2.540(0.100)BSC 5.080(0.200) BSC
0.450(0.018) 0.700(0.028)
1.400(0.055) 1.780(0.070)
0.430(0.017) 0.600(0.023)
2.550(0.100) 3.200(0.126)
Jul. 2006 Rev. 1. 2 11
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 3A DDR TERMINATION REGULATOR Mechanical Dimensions (Continued) TO-263-5L Unit: mm(inch) AP2302
1.560 (0.061) 1.760 (0.069)
9.880 (0.389) 10.180 (0.401)
4.470 (0.176) 4.670 (0.184) 1.170 (0.046) 1.370 (0.054)
5.600 (0.220) REF
8.200 (0.323) 8.600 (0.339)
15.140 (0.596) 15.540 (0.612)
5.080 (0.200) 5.480 (0.216) 0.710 (0.028) 0.910 (0.036)
0.020(0.001) 0.250(0.010)
1.700 (0.067) TYP 6.700 (0.264) 6.900 (0.272)
0.310 (0.012) 0.530 (0.021) 2.340 (0.092) 2.740 (0.108)
Jul. 2006 Rev. 1. 2 12
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
MAIN SITE BCD Semiconductor Manufacturing Limited
- Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
- IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386


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